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DBR  SYSTEM








            <Ion Assist 無>         <Ion Assist 有>                    Description                Speci cation

                                                                                        -  Vertical type
                                                                                        -  Material : STS304
                                                           Process Chamber  Process chamber  -  Size : Ø2050mm(D) × 1650mm(H)
                                                                                                 Ø1350mm(D) × 1400mm(H)
                                                                                        -  Heating : Micro sheathe heater
                                                           Substrate rotation   Rotation  -  Rotational type : Revolution and
                                                           & carrier                     rotation
                                                                            HV Pump     -  Oil diffusion or Cryo Pump
                                                           Exhausting system
                                                                                        -  Rotary vane pump
                                                                            LV Pump
                                                                                        -  Booster pump
                                                                           E/B Gun #1   - SiO2 only
                                                           Evaporation source           - No. of crucible : 20
                                                                           E/B Gun #2
 • Dual E-Beam source                                                                   - Quantity of crucible : 25cc
 • RF Ion source                                                            Ion beam    -  Size : 170mm, 230mm
 • Thickness monitor
                                                           RF Ion beam source           -  RF2002, 1200Watt
                                                                           Power supply
   Optical Process Monitoring                                                           -  50 ~ 1200V, 1200mA
   QCM (Quartz Crystal Microbalance)                                          QCM
                                                           Thickness monitor
                                                                              OMS       - Wavelength  350 ~ 1100nm
                                                                                        - Glass changer 80 point
                                                           Processing gas supply  M.F.C  -  100sccm~500sccm
                                                             Vacuum gauge               -  Cold cathode gauge & Pirani gauge
                                                                                         Gas flow 5 × E-6 mbar l/s, (Max.),
                                                           Auto pressure control        -
                                                                                         1,250mbar l/s(Min.)
                                                            System controller           -  PC(HMI) + PLC(I/O)+Thickness monitor
 ■ 230mm RFsource






 Item  spec
 Ultimate Pressure  ≤ 5.0×10 -5  Pa
 Leak Rate  ≤ 2.0×10 -3  Pa                                                                       D
                                                                                    F
 Build up  ≤ 7.0×10-6  Pa・m3/s
          A   Processing Chamber
 Pumping speed  27,000L/sec                                         G
 Uniformity  250±10℃  B  System Controller                                                         C
 Heat  Heating Temp. Range
 performance  25~350℃                                                               E
 Temp. Rising Time  ≤ 30min (250±10℃)  C  Electron beam power supply
 ■ 170mm RFsource
 Single layer
 film Tickness  Within ±1.0% at optical film   D  Ion beam power supply
 thickness 3/4λ(λ=650nm)
 Uniformity                                                                                       B
          E   High vacuum pump
 Deposition  General   *# of layers:40 Layers  (Oil diffusion / Cryo/ Turbo pump)   A
 Performance.  Deposition   *Characteristic:IA=5° Rave>98% @
 performance  420nm~700nm  F  Low vacuum pump
 IA=5° R<10% @1064nm
              (Rotary pump+Booster)
 Reflectance  420~700nm : >98%
          G   Water vapor cryocooler






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