Page 44 - Univac Catalog_E_Book

ION BEAM SOURCE ( GRID TYPE ) ION BEAM SOURCE ( LINEAR TYPE )

Ion Source _Uisr23

ULIS – 1400 / Flange type Linear Ion Source

RF Ion Source & Neutralizer RF Ion Source in the IBAD 2050

Specifications

Item Speci cation The ion beam can be applied in various fields such as surface cleaning
Model UISR23 and surface modification to improve adhesion of the thin film, as well Ion Beam Cleaning
Ion source as improving the density of the thin film, improving the electrical ·
Max. Beam Current 1,800mA optical properties, and applying a low temperature deposition process. Ion-beam cleaning technology is intended for finish cleaning of substrate surface with accelerated ions beam with energy from molecular particles,
Max. Beam Voltage 1,500V End Hall type ion source uses DC power, so the direction of electron adsorbed gases, polymer fragments, water vapors, as well as atomic activation of substrate surface bonds just before thin-film coating deposition.
Acc Voltage 1,000V
Grids Ø23cm acceleration is one direction from filament to anode. Therefore,
Dimensions Ø390mm×240mm(H) only the neutral gas in the straight path is ionized by collisions with
Usable Gas Ar,O2 electrons. On the other hand, in the case of RF power, electrons
RF Power 2kW move in a spiral motion as the poles alternate between + and – to Ion Beam Assisting
Operational Vacuum Degree 5×E-5~3×E- Torr 13.56 MHz. As a result, the density of ionization is higher because
Neutralizer Ion assisting is performed not only before, but also in the course of coatings deposition
Dimensions Ø70mm×120mm(H) electrons increase the number of collisions with the neutral gas, and by vacuum evaporation and sputtering methods. Most wide application of this
Max. Emisson current 2800mA the secondary electrons also generated by the collision in this process
Max. RF Power 600W do the same. Grid type ion source can control ion energy according technology is combination with electron-beam evaporation. It allowed to improve such
Usable Gas Ar to voltage applied to Grid. Therefore, efficient deposition is possible parameters as adhesion and density of deposited coatings.
DC Power supply because low or high ion energy can be supplied as needed and also,
Beam 2000V / 3A suitable energy can be supplied to various thin films or substrates to
Acceleration -2000V / 0.5A
Keeper +100V / 3A be deposited. As a result, the energy controlling allows the desired thin
Emission -200V / 3A film to be efficiently deposited on film, glass, and etc.

ULIS - 400 ULIS - 1000

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