Page 31 - Univac Catalog_E_Book

LSS Design

RADICAL SPUTTERING SYSTEM

MODEL : LSS-1100

LSS Feature

- New concept Sputter System with High Density Radical Source of ICP Type.
- Adopting Radical Source, a high density plasma, enables ultra-multi-layered nano thin film deposition of over 60 layers.
- Si and Nb cathode and high density radical source in Chamber with high speed rotary drum.
- Metal Mode(Si, Nb Sputtering process), Oxidation Mode(Plasma process by Radical Source) Separation
⇒ Complete oxide deposition.
- Possible to implement existing Sputter Process / Reactive Sputter Process / AR + AF Sputter Process

Metal Mode Process
LSS OVERVIE & USE
- Perfect Oxidation Process
- The process of LSS with Radical Source improves the problem of IBAD Increasing Deposition Rate
process and SPUTTER process simultaneously Preventing Oxidation (Target)
- Deposition optimization equipment on AR, BBAR, DBR, Blue Filter,
Narrow Band Pass Filter and UV-IR Cut Filter.

Ar Ar

360
Nb Target Si Target 100% Plasma Density B方向 270
(relative value)
95%
90% 95.0%-100.0% 180
Oxida�on 85% 90.0%-95.0% 90
Mode 80% 85.0%-90.0%
Sample Jig 75% 80.0%-85.0% 0
70% 75.0%-80.0%
Turb o 65% 70.0%-75.0% -90
60%
55%
65.0%-70.0%
-180
Turb
o
LIA Source Piim 50% 60.0%-65.0% -270
Piim

55.0%-60.0%
50.0%-55.0% -360

-360 Antenna Pitch：260mm
O2 A-S Distance：100mm,120mm
The number of the antennas：3pc
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